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| ST730CLPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 990 A FEATURES * Center amplifying gate * Metal case with ceramic insulator * International standard case TO-200AC (B-PUK) * Lead (Pb)-free TO-200AC (B-PUK) RoHS COMPLIANT * Designed and qualified for industrial level TYPICAL APPLICATIONS PRODUCT SUMMARY IT(AV) 990 A * DC motor controls * Controlled DC power supplies * AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) ITSM I2 t VDRM/VRRM tq TJ Typical TEST CONDITIONS VALUES 990 Ths Ths 50 Hz 60 Hz 50 Hz 60 Hz 55 2000 25 17 800 18 700 1591 1452 800 to 2000 150 - 40 to 125 UNITS A C A C A kA2s V s C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 08 12 ST730C..L 14 16 18 20 VDRM/VRRM, MAXIMUM REPETITIVE PEAK VRSM, MAXIMUM IDRM/IRRM MAXIMUM AND OFF-STATE VOLTAGE NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM V mA V 800 1200 1400 1600 1800 2000 900 1300 1500 1700 1900 2100 80 Document Number: 94414 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 ST730CLPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 990 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled DC at 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Typical latching current I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 990 (375) 55 (85) 2000 17 800 18 700 15 000 Sinusoidal half wave, initial TJ = TJ maximum 15 700 1591 1452 1125 1027 15 910 0.98 1.12 0.32 0.27 1.62 600 1000 kA2s V kA2s A UNITS A C t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum Ipk = 2000 A, TJ = TJ maximum, tp = 10 ms sine pulse TJ = 25 C, anode supply 12 V resistive load m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s VALUES 1000 1.0 s 150 UNITS A/s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum linear to 80 % rated VDRM TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 80 UNITS V/s mA www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94414 Revision: 11-Aug-08 ST730CLPbF Series Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 990 A TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM + VGM - VGM TEST CONDITIONS TJ = TJ maximum, tp 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 TJ = TJ maximum, tp 5 ms TJ = TJ maximum, tp 5 ms TJ = - 40 C DC gate current required to trigger IGT TJ = 25 C TJ = 125 C TJ = - 40 C DC gate voltage required to trigger VGT TJ = 25 C TJ = 125 C DC gate current not to trigger IGD TJ = TJ maximum DC gate voltage not to trigger VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied 200 100 50 2.5 1.8 1.1 10 VALUES TYP. MAX. UNITS 10.0 2.0 3.0 20 5.0 200 3.0 - W A V mA V mA 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink SYMBOL TJ TStg RthJ-hs DC operation single side cooled DC operation double side cooled DC operation single side cooled DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.073 0.031 0.011 0.006 14 700 (1500) 255 See dimensions - link at the end of datasheet N (kg) g K/W UNITS C Maximum thermal resistance, case to heatsink Mounting force, 10 % Approximate weight Case style RthC-hs TO-200AC (B-PUK) RthJ-hs CONDUCTION CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION SINGLE SIDE 0.009 0.011 0.014 0.020 0.036 DOUBLE SIDE 0.009 0.011 0.014 0.020 0.036 RECTANGULAR CONDUCTION SINGLE SIDE 0.006 0.010 0.015 0.021 0.036 DOUBLE SIDE 0.006 0.011 0.015 0.021 0.036 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Document Number: 94414 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 ST730CLPbF Series Vishay High Power Products Maximum Allowa ble Heatsink T emperature (C) 130 120 110 100 90 80 70 60 50 40 0 100 200 300 400 500 600 700 Average On-s tate Current (A) Fig. 1 - Current Ratings Characteristics Maximum Allowable Heatsink T emperature (C) Maximum Average On-state Power Loss (W) Conduction Angle Phase Control Thyristors (Hockey PUK Version), 990 A Maximum Allowable Heatsink T emperat ure (C) 130 120 110 100 90 80 70 60 50 40 30 20 0 400 800 30 60 90 120 180 DC 1200 1600 2000 2400 Conduction Period S 730C..L S T eries (S ingle S Cooled) ide RthJ-hs (DC) = 0.073 K/ W S 730C..L S T eries (Double S ide Cooled) RthJ-hs (DC) = 0.031 K/ W 30 60 90 120 180 Average On-state Current (A) Fig. 4 - Current Ratings Characteristics 130 120 110 100 90 80 70 60 50 40 30 20 0 200 30 S 730C..L S T eries (S ingle S ide Cooled) R thJ-hs (DC) = 0.073 K/ W 2500 180 120 90 60 30 2000 RMS Limit 1500 Conduc tion Period 1000 Conduc tion Angle 60 90 120 180 400 600 800 DC 1000 1200 500 S 730C..L Series T TJ = 125C 0 200 400 600 800 1000 1200 1400 0 Average On-state Current (A) Fig. 5 - On-State Power Loss Characteristics Average On-state Current (A) Fig. 2 - Current Ratings Characteristics Maximum Average On-s tate Power Los (W) s Maximum Allowable Heatsink T emperature (C) 130 120 110 100 90 80 70 60 50 40 30 20 0 200 400 30 3500 3000 2500 2000 RMS Limit 1500 Conduction Period S 730C..L S T eries (Double S ide Cooled) RthJ-hs (DC) = 0.031 K/ W DC 180 120 90 60 30 Conduction Angle 1000 500 0 0 400 800 1200 1600 2000 2400 Average On-state Current (A) Fig. 6 - On-State Power Loss Characteristics S 730C..L S T eries T = 125C J 60 90 120 180 600 800 1000 1200 1400 Fig. 3 - Current Ratings Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94414 Revision: 11-Aug-08 ST730CLPbF Series Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 990 A Peak Half S Wave On-state Current (A) ine Peak Half S Wave On-state Current (A) ine 16000 15000 14000 13000 12000 11000 10000 9000 8000 7000 1 At Any Rated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 125C J @60 Hz 0.0083 s @50 Hz 0.0100 s 18000 17000 Maximum Non R epetitive S urge Current Versus Pulse T rain Duration. Control 16000 Of Conduc tion May Not Be Maintained. Initial T = 125C J 15000 No Voltage Reapplied R ated VRRMReapplied 14000 13000 12000 11000 10000 9000 8000 S 730C..L S T eries S 730C..L S T eries 10 100 7000 0.01 0.1 1 Numb er Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 10000 Instantaneous On-state Current (A) T = 25C J Pulse T rain Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled T = 125C J 1000 S 730C..L S T eries 100 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 9 - On-State Voltage Drop Characteristics T ransient T hermal Impedance ZthJ-hs (K/ W) 0.1 S teady S tate Value R thJ-hs = 0.073 K/ W (S ingle S ide Cooled) R thJ-hs = 0.031 K/ W (Double S Cooled) ide 0.01 (DC Operation) S 730C..L S T eries 0.001 0.001 0.01 0.1 S quare Wave Pulse Duration (s) 1 10 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Document Number: 94414 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST730CLPbF Series Vishay High Power Products 100 Instantaneous Gate Voltage (V) Phase Control Thyristors (Hockey PUK Version), 990 A (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a) (b) T j=-40 C Rec tangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 s b) R ommended load line for ec <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms T j=25 C T j=125 C 1 VGD IGD 0.1 0.001 0.01 (1) (2) (3) (4) Device: S 730C..L S T eries 0.1 1 Frequenc y Limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code ST 1 1 2 3 4 5 6 7 73 2 - 0 3 C 4 20 5 L 6 1 7 8 PbF 9 Thyristor Essential part number 0 = Converter grade C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) L = PUK case TO-200AC (B-PUK) 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 8 9 - Critical dV/dt: Lead (Pb)-free None = 500 V/s (standard selection) L = 1000 V/s (special selection) LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95076 www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94414 Revision: 11-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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